What is the number density of donor atoms which must be added to a pure germanium semiconductor to make an $n$-type semiconductor of conductivity $6.4 \ \Omega^{-1} \ cm^{-1}$? The mobility of electrons in $n$-type germanium is $4 \times 10^3 \ cm^2 \ V^{-1} \ s^{-1}$. Neglect the contribution of holes to conductivity.

  • A
    $10^{16} \ m^{-3}$
  • B
    $10^{18} \ m^{-3}$
  • C
    $10^{20} \ m^{-3}$
  • D
    $10^{22} \ m^{-3}$

Explore More

Similar Questions

In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

Which one of the following statements is true? $A$ p-type semiconductor is doped with

In a semiconductor,the intrinsic carrier concentration of electrons and holes is $6 \times 10^8 \ m^{-3}$. After doping with some impurity,the electron concentration increases to $9 \times 10^{12} \ m^{-3}$. Find the new hole concentration.

In an $N$-type semiconductor,where are the donor energy levels $E_D$ located?

Out of the following impurities, which impurity is not a trivalent?

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo